The eGaN FET Journey Continues PSMA Power Technology

The eGaN FET Journey Continues PSMA Power Technology

The eGaN FET Journey Continues PSMA Power Technology Roadmap Alex Lidow, CEO Efficient Power Conversion Corporation October 2012 EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 1 Agenda GaN Business Overview What Impacts the Adoption Rate Making GaN Easy to Use Now and In the Future

New Applications for GaN Cost Roadmaps and Comparisons Reliability Summary EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 22 Business Overview

EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 3 Served Available Market (SAM) Percent Share of 2010 Power Transistor Market 50% EPCs initial product Power FET (up to 200V) $4.6B 40% 30%

20% RF/Microwave $1.3B Mostly 600 V Bipolar $970M 10% 0% IGBT modules $2.3B Power FET (over 200V) $1.7B Bipolar Modules $49M

4% IGBTs $878M FET Modules $232M 5% 6% 7% 8% 2010-2015 CAGR Source: IC Insights EPC - The Leader in eGaN FETs Total = $12B in 2015 October 2012 www.epc-co.com

4 Power ICs Add to the SAM $18 $16 Market Size ($B) $14 $12 $10 Transistors Power Module $8 Power IC $6 $4 $2 $0

Source: Yole Development EPC - The Leader in eGaN FETs Total = $18B in 2015 October 2012 www.epc-co.com 5 GaN Market Projection EPC believes these projections are too optimistic and that 2015 GaN revenues will be less than $100M including RF Source: Yole Development EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 6

Adoption EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 7 What Controls Adoption? 1. Make GaN Devices Easy to Use 2. Develop Applications beyond Silicons Ca pabilities 3. Make GaN Cost Effective 4. Establish GaNs Reliability EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 8

Making GaN Easy to Use EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 9 Is an eGaN FET easy to use? Its just like a MOSFET except The high frequency capability makes circuits using eGaN FETs sensitive to layout The lower VG(MAX) of 6 V makes it advisable to have VGS regulation in your gate drive circuitry EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 10

Ecosystem Development Texas Instruments Driver ICs and multi-chip modules Microsemi Hi Rel and Radiation Hard Transistors EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 11 Universities With GaN Programs Universities all over the world are graduating well-trained engineers experienced in the use of eGaN FETs.

University of California at Santa Barbara Virginia Polytechnic University Renssalaer Polytechnic Institute Hong Kong University of Science and Technology Cornell University Katholieke Universiteit Leuven University of Bristol University of Glasgow University of Sheffield University of Warsaw University of Sydney Massachusetts Institute of Technology Cambridge University National Central University of Taiwan EPC - The Leader in eGaN FETs

October 2012 www.epc-co.com 12 Beyond Discrete Devices Driver On Board Discrete FET with Driver Full-Bridge with Driver and Level Shift EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 13 What Other Advances are Needed? High speed digital controller ICs and integrate d controller/driver ICs.

Application specific controllers to reduce ti me-to-market Dynamic deadtime control with ~1ns resolu tion Synchronous PFCs Envelope Tracking Controllers Note: Improvements in magnetics would be h elpful EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 14 Making eGaN FETs Easy to Use Enhancement Mode eGaN FETs are just like MOSFETs Developing an ecosystem of strategic partners and compatible pr oducts Supporting University Research PhD Level Applications Engineering Training Engineers through Applications and Seminars The first GaN Transistor Textbook Demonstration Boards and Development Kits

Highly Experienced Field Applications Engineering for customer t raining Monolithic GaN ICs EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 15 Developing New Application s EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 16 New Applications Enabled by eGaN FETs

Wireless Power Transmission RF DC-DC Envelope Tracking High Energy Pulsed Lasers RadHard EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 17 Wireless Power $15.1 B Market by 2020* eGaN FETs enable higher efficiency and operation at safer frequencies EPC - The Leader in eGaN FETs October 2012

www.epc-co.com 18 Envelope Tracking LTE Infrastructure forecasted to grow to $24B in 2013* Envelope Tracking can double base station efficiency EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 19 LiDAR - Pulsed Laser $330M market estimate for 2011* eGaN FETs enable faster and larger laser pulses 800 A EPC - The Leader in eGaN FETs

October 2012 www.epc-co.com 20 Rad Hard $100M Market for Rad Hard MOSFETs eGaN FETs withstand more than 10x radiation and enable higher system efficiency EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 21 Other Key Applications

Power Over Ethernet RF Transmission Network and Server Power Supplies Power Factor Correction Point of Load Modules Solar Microinverters Energy Efficient Lighting Class D Audio EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 22 Making GaN Cost Effective EPC - The Leader in eGaN FETs October 2012

www.epc-co.com 23 Silicon vs eGaN FET Costs 2012 2015 same same Epi Growth higher ~same Wafer Fab same lower

Test same same Assembly lower lower OVERALL higher ~same Starting Material EPC - The Leader in eGaN FETs October 2012

www.epc-co.com 24 Cascode vs Enhancement Mode Cascode devices combine a depletion mode GaN transistor with a low voltage enhancement mode MOSFET Drain Gate Source EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 25 Establishing GaNs Reliabilit y EPC - The Leader in eGaN FETs

October 2012 www.epc-co.com 26 eGaN FETs are Reliable DS HTRB at EPC2001 V GS(TH) after 100V 125oC 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0

Vth (V) Normalized Rdson EPC2001 RDS(ON) after 100V 200 400 600 800 400 600 800 1000 Stress Hours EPC2015 Idss after 40V H3TRB at 85 oC/85%RH

5.0E-04 oC T J datasheet spec: 500uA max 1.1 board a 1.05 board b board c 1 board d board e 0.95 [email protected] (A) Normalized Efficiency

200 1000 Stress Hours EPC9001 Effi ciency after Op Life Test at 85 at 125oC 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0

DS HTRB 4.0E-04 3.0E-04 2.0E-04 1.0E-04 0.0E+00 0.9 0 1000 2000 0 3000 Stress Hours EPC - The Leader in eGaN FETs 200

400 600 800 1000 Stress Hours October 2012 www.epc-co.com 27 27 Summary eGaN technology is disruptive EPC has been in production for 3 years GaN-enabled applications have surfaced GaN infrastructure is developing eGaN FET costs are coming down rapidly eGaN FETs are reliable

GaN adoption rate is accelerating EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 28 The end of the road for silicon.. is the beginning of the eGaN FET journey! EPC - The Leader in eGaN FETs October 2012 www.epc-co.com 29

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